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VP2110K1-G
Microchip Technology
型号:
VP2110K1-G
封装:
TO-236AB (SOT23)
批次:
-
数据手册:
描述:
MOSFET P-CH 100V 120MA TO236AB
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V |
| FET Type | P-Channel |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 500mA, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Supplier Device Package | TO-236AB (SOT23) |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 360mW (Ta) |
| Series | - |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Microchip Technology |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Tj) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | VP2110 |
