TSM900N10CH
detaildesc

TSM900N10CH

Taiwan Semiconductor Corporation

型号:

TSM900N10CH

封装:

TO-251S (I-PAK SL)

批次:

-

数据手册:

pdf

描述:

100V, 15A, SINGLE N-CHANNEL POWE

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 90mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-251S (I-PAK SL)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 50W (Tc)
Series -
Package / Case TO-251-3 Stub Leads, IPak
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number TSM900