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TSM60NC196CM2 RNG
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TSM60NC196CM2 RNG

Taiwan Semiconductor Corporation

型号:

TSM60NC196CM2 RNG

封装:

TO-263AB (D²PAK)

批次:

-

数据手册:

pdf

描述:

600V, 28A, SINGLE N-CHANNEL POWE

购买数量:

递送:

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付款:

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库存 : 2400

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $8.3695

    $8.3695

  • 10

    $7.1706

    $71.706

  • 100

    $5.97588

    $597.588

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1566 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 196mOhm @ 9.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 1mA
Supplier Device Package TO-263AB (D²PAK)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 152W (Tc)
Series -
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TSM60