TSM60NB190CZ C0G
detaildesc

TSM60NB190CZ C0G

Taiwan Semiconductor Corporation

型号:

TSM60NB190CZ C0G

封装:

TO-220

批次:

-

数据手册:

pdf

描述:

MOSFET N-CHANNEL 600V 18A TO220

购买数量:

递送:

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付款:

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库存 : 3868

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.5365

    $2.5365

  • 10

    $2.10805

    $21.0805

  • 100

    $1.67808

    $167.808

  • 500

    $1.419927

    $709.9635

  • 1000

    $1.20478

    $1204.78

  • 2000

    $1.144541

    $2289.082

  • 5000

    $1.101516

    $5507.58

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1273 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 33.8W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM60