TSM60NB190CF C0G
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TSM60NB190CF C0G

Taiwan Semiconductor Corporation

型号:

TSM60NB190CF C0G

封装:

ITO-220S

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 18A ITO220S

购买数量:

递送:

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付款:

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库存 : 3526

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $6.593

    $6.593

  • 10

    $5.6525

    $56.525

  • 100

    $4.7101

    $471.01

  • 500

    $4.155984

    $2077.992

  • 1000

    $3.740378

    $3740.378

  • 2000

    $3.504873

    $7009.746

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1311 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 3.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package ITO-220S
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 59.5W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM60