TSM60NB150CF
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TSM60NB150CF

Taiwan Semiconductor Corporation

型号:

TSM60NB150CF

封装:

ITO-220S

批次:

-

数据手册:

pdf

描述:

600V, 24A, SINGLE N-CHANNEL POWE

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1765 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 150mOhm @ 4.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package ITO-220S
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 62.5W (Tc)
Series -
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TSM60