TSM220NB06CR RLG
detaildesc

TSM220NB06CR RLG

Taiwan Semiconductor Corporation

型号:

TSM220NB06CR RLG

封装:

8-PDFN (5x6)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 8A/35A 8PDFN

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 5000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.5295

    $1.5295

  • 10

    $1.25495

    $12.5495

  • 100

    $0.97603

    $97.603

  • 500

    $0.827317

    $413.6585

  • 1000

    $0.67393

    $673.93

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1454 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package 8-PDFN (5x6)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.1W (Ta), 68W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 8A (Ta), 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TSM220