TSM110NB04LDCR RLG
detaildesc

TSM110NB04LDCR RLG

Taiwan Semiconductor Corporation

型号:

TSM110NB04LDCR RLG

封装:

8-PDFN (5x6)

批次:

-

数据手册:

pdf

描述:

DUAL N-CHANNEL POWER MOSFET 40V,

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 5000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.375

    $2.375

  • 10

    $1.97315

    $19.7315

  • 100

    $1.57016

    $157.016

  • 500

    $1.328594

    $664.297

  • 1000

    $1.127298

    $1127.298

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1269pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PDFN (5x6)
Drain to Source Voltage (Vdss) 40V
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta), 48W (Tc)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 48A (Tc)
Package Tape & Reel (TR)
Base Product Number TSM110