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TSM085N03PQ33 RGG
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TSM085N03PQ33 RGG

Taiwan Semiconductor Corporation

型号:

TSM085N03PQ33 RGG

封装:

8-PDFN (3.1x3.1)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 52A 8PDFN

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 10001

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.3395

    $1.3395

  • 10

    $1.0982

    $10.982

  • 100

    $0.854335

    $85.4335

  • 500

    $0.724147

    $362.0735

  • 1000

    $0.589902

    $589.902

  • 2000

    $0.555322

    $1110.644

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 817 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.5mOhm @ 13A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PDFN (3.1x3.1)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 37W (Tc)
Series -
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM085