TSM018NB03CR RLG
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TSM018NB03CR RLG

Taiwan Semiconductor Corporation

型号:

TSM018NB03CR RLG

封装:

8-PDFN (5x6)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 29A/194A 8PDFN

购买数量:

递送:

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付款:

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库存 : 4970

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $3.5055

    $3.5055

  • 10

    $2.945

    $29.45

  • 100

    $2.382695

    $238.2695

  • 500

    $2.117968

    $1058.984

  • 1000

    $1.813502

    $1813.502

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7252 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.8mOhm @ 29A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-PDFN (5x6)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.1W (Ta), 136W (Tc)
Series -
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Mfr Taiwan Semiconductor Corporation
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 194A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TSM018