TP5335MF-G-VAO
detaildesc

TP5335MF-G-VAO

Microchip Technology

型号:

TP5335MF-G-VAO

封装:

6-DFN (2x2)

批次:

-

数据手册:

pdf

描述:

MOSFET, P-CHANNEL ENHANCEMENT-MO

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 25 V
FET Type P-Channel
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 30Ohm @ 200mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 1mA
Supplier Device Package 6-DFN (2x2)
Drain to Source Voltage (Vdss) 350 V
Power Dissipation (Max) 360mW (Ta)
Series Automotive, AEC-Q100
Package / Case 6-VDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr Microchip Technology
Current - Continuous Drain (Id) @ 25°C 85mA (Tj)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TP5335