TP44220HB
detaildesc

TP44220HB

Tagore Technology

型号:

TP44220HB

封装:

30-QFN (8x10)

批次:

-

数据手册:

pdf

描述:

GAN FET 1/2 BRIDGE .18OHM 30QFN

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 100

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $7.4195

    $7.4195

  • 10

    $6.3612

    $63.612

  • 100

    $5.30119

    $530.119

  • 500

    $4.677572

    $2338.786

  • 1000

    $4.63125

    $4631.25

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -
FET Feature -
Configuration 2 N-Channel (Half Bridge)
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs -
Product Status Active
Vgs(th) (Max) @ Id -
Supplier Device Package 30-QFN (8x10)
Drain to Source Voltage (Vdss) 650V
Series -
Package / Case 30-PowerWFQFN
Technology GaNFET (Gallium Nitride)
Power - Max -
Mfr Tagore Technology
Current - Continuous Drain (Id) @ 25°C -
Package Tray
Base Product Number TP44220