TP44100SG
Tagore Technology
型号:
TP44100SG
封装:
22-QFN (5x7)
批次:
-
数据手册:
描述:
GAN FET HEMT 650V .09OHM 22QFN
购买数量:
递送:
付款:
库存 : 2999
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$6.27
$6.27
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 400 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 6 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 500mA, 6V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.7V @ 11mA (Typ) |
| Supplier Device Package | 22-QFN (5x7) |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | - |
| Series | - |
| Package / Case | 22-PowerVFQFN |
| Technology | GaNFET (Gallium Nitride) |
| Mfr | Tagore Technology |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |
| Vgs (Max) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 6V |
| Package | Tape & Reel (TR) |
| Base Product Number | TP44100 |
