SUP60030E-GE3
detaildesc

SUP60030E-GE3

Vishay Siliconix

型号:

SUP60030E-GE3

封装:

TO-220AB

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 80V 120A TO220AB

购买数量:

递送:

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付款:

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库存 : 354

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.793

    $2.793

  • 10

    $2.5118

    $25.118

  • 100

    $2.05808

    $205.808

  • 500

    $1.752047

    $876.0235

  • 1000

    $1.47763

    $1477.63

  • 2000

    $1.403748

    $2807.496

  • 5000

    $1.350976

    $6754.88

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7910 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 141 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.4mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 375W (Tc)
Series TrenchFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Bulk
Base Product Number SUP60030