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SUD19N20-90-T4-E3
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SUD19N20-90-T4-E3

Vishay Siliconix

型号:

SUD19N20-90-T4-E3

封装:

TO-252AA

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 200V 19A TO252

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 90mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Series TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number SUD19