STU3N65M6
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STU3N65M6

STMicroelectronics

型号:

STU3N65M6

封装:

I-PAK

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 650V 3.5A IPAK

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.75A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.75V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 45W (Tc)
Series MDmesh™ M6
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STU3N65