STS1HNK60
detaildesc

STS1HNK60

STMicroelectronics

型号:

STS1HNK60

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 300MA 8SO

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -65°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3.7V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 2W (Tc)
Series SuperMESH™
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STS1