STQ2LN60K3-AP
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STQ2LN60K3-AP

STMicroelectronics

型号:

STQ2LN60K3-AP

封装:

TO-92-3

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 600MA TO92-3

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 4.5Ohm @ 1A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 50µA
Supplier Device Package TO-92-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 2.5W (Tc)
Series SuperMESH3™
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 600mA (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Cut Tape (CT)
Base Product Number STQ2LN60