STP80N6F6
detaildesc

STP80N6F6

STMicroelectronics

型号:

STP80N6F6

封装:

TO-220

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 110A TO220

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 642

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $2.47

    $2.47

  • 10

    $2.0501

    $20.501

  • 100

    $1.63153

    $163.153

  • 500

    $1.380521

    $690.2605

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7480 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 120W (Tc)
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STP80N