STI26NM60N
detaildesc

STI26NM60N

STMicroelectronics

型号:

STI26NM60N

封装:

I2PAK

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 600V 20A I2PAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 942

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $4.5505

    $4.5505

  • 10

    $3.8171

    $38.171

  • 100

    $3.08807

    $308.807

  • 500

    $2.74493

    $1372.465

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 165mOhm @ 10A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I2PAK
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 140W (Tc)
Series MDmesh™ II
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STI26N