STI11NM80
detaildesc

STI11NM80

STMicroelectronics

型号:

STI11NM80

封装:

I2PAK (TO-262)

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 800V 11A I2PAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -65°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1630 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 43.6 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package I2PAK (TO-262)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 150W (Tc)
Series MDmesh™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STI11