STH12N120K5-2
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STH12N120K5-2

STMicroelectronics

型号:

STH12N120K5-2

封装:

H2Pak-2

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 1200V 12A H2PAK-2

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 100µA
Supplier Device Package H2Pak-2
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 250W (Tc)
Series MDmesh™ K5
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STH12