STB80N20M5
detaildesc

STB80N20M5

STMicroelectronics

型号:

STB80N20M5

封装:

D2PAK

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 200V 61A D2PAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 请查询

请发送RFQ,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4329 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 23mOhm @ 30.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 190W (Tc)
Series MDmesh™ V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 61A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB80