STB200N6F3
detaildesc

STB200N6F3

STMicroelectronics

型号:

STB200N6F3

封装:

D2PAK

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 120A D2PAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

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库存 : 292

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $5.282

    $5.282

  • 10

    $4.4384

    $44.384

  • 100

    $3.59062

    $359.062

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.6mOhm @ 60A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 330W (Tc)
Series STripFET™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Mfr STMicroelectronics
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB200N