SQUN700E-T1_GE3
detaildesc

SQUN700E-T1_GE3

Vishay Siliconix

型号:

SQUN700E-T1_GE3

封装:

Die

批次:

-

数据手册:

pdf

描述:

40-V N- & P-CH COMMON DRAIN + 20

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual), P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA, 2.5V @ 250µA
Supplier Device Package Die
Drain to Source Voltage (Vdss) 200V, 40V
Series Automotive, AEC-Q101, TrenchFET®
Package / Case Die
Technology MOSFET (Metal Oxide)
Power - Max 50W (Tc), 48W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 16A (Tc), 30A (Tc)
Package Tape & Reel (TR)
Base Product Number SQUN700