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SQS484CENW-T1_GE3
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SQS484CENW-T1_GE3

Vishay Siliconix

型号:

SQS484CENW-T1_GE3

封装:

PowerPAK® 1212-8W

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 40V 16A PPAK 1212-8W

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8W
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 62.5W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8W
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQS484