SQJ886EP-T1_BE3
detaildesc

SQJ886EP-T1_BE3

Vishay Siliconix

型号:

SQJ886EP-T1_BE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

N-CHANNEL 40-V (D-S) 175C MOSFET

购买数量:

递送:

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付款:

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库存 : 3000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.4345

    $1.4345

  • 10

    $1.1704

    $11.704

  • 100

    $0.910195

    $91.0195

  • 500

    $0.771457

    $385.7285

  • 1000

    $0.628434

    $628.434

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2922 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 15.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 55W (Tc)
Series -
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)