SQJ860EP-T1_BE3

Vishay Siliconix

Product No:

SQJ860EP-T1_BE3

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Package:

PowerPAK® SO-8 Dual

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Description:

N-CHANNEL 40-V (D-S) 175C MOSFET

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In Stock : 6000

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	PowerPAK® SO-8 Dual
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	48W (Tc)
Series	-
Package / Case	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)