SQJ858AEP-T1_GE3
detaildesc

SQJ858AEP-T1_GE3

Vishay Siliconix

型号:

SQJ858AEP-T1_GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 40V 58A PPAK SO-8

购买数量:

递送:

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付款:

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库存 : 5760

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.121

    $1.121

  • 10

    $1.00415

    $10.0415

  • 100

    $0.78318

    $78.318

  • 500

    $0.647007

    $323.5035

  • 1000

    $0.510786

    $510.786

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.3mOhm @ 14A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 48W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 58A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQJ858