SQJ262EP-T1_GE3
Vishay Siliconix
型号:
SQJ262EP-T1_GE3
品牌:
封装:
PowerPAK® SO-8 Dual Asymmetric
批次:
-
数据手册:
描述:
MOSFET 2 N-CH 60V POWERPAK SO8
购买数量:
递送:
付款:
库存 : 请查询
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产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Configuration | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V, 1260pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V, 23nC @ 10V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 2A, 10V, 15.5mOhm @ 5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 Dual Asymmetric |
| Drain to Source Voltage (Vdss) | 60V |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | PowerPAK® SO-8 Dual |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 27W (Tc), 48W (Tc) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc), 40A (Tc) |
| Package | Tape & Reel (TR) |
| Base Product Number | SQJ262 |
