SQJ200EP-T1_GE3
detaildesc

SQJ200EP-T1_GE3

Vishay Siliconix

型号:

SQJ200EP-T1_GE3

封装:

PowerPAK® SO-8 Dual Asymmetric

批次:

-

数据手册:

pdf

描述:

MOSFET 2N-CH 20V 20A/60A PPAK SO

购买数量:

递送:

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付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 3000

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.102

    $1.102

  • 10

    $0.9861

    $9.861

  • 100

    $0.76912

    $76.912

  • 500

    $0.635341

    $317.6705

  • 1000

    $0.501581

    $501.581

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric
Drain to Source Voltage (Vdss) 20V
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8 Dual
Technology MOSFET (Metal Oxide)
Power - Max 27W, 48W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 20A, 60A
Package Tape & Reel (TR)
Base Product Number SQJ200