SQJ152EP-T1_GE3
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SQJ152EP-T1_GE3

Vishay Siliconix

型号:

SQJ152EP-T1_GE3

封装:

PowerPAK® SO-8

批次:

-

数据手册:

pdf

描述:

AUTOMOTIVE N-CHANNEL 40 V (D-S)

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.1mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 136W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 114A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)