SQD50N06-09L_GE3
detaildesc

SQD50N06-09L_GE3

Vishay Siliconix

型号:

SQD50N06-09L_GE3

封装:

TO-252AA

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 50A TO252

购买数量:

递送:

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付款:

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库存 : 4522

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $4.5885

    $4.5885

  • 10

    $4.1192

    $41.192

  • 100

    $3.37535

    $337.535

  • 500

    $2.873351

    $1436.6755

  • 1000

    $2.423317

    $2423.317

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3065 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 136W (Tc)
Series TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQD50