SQD10N30-330H_4GE3
Vishay Siliconix
型号:
SQD10N30-330H_4GE3
品牌:
封装:
TO-252AA
批次:
-
数据手册:
描述:
N-CHANNEL 300-V (D-S) 175C MOSFE
购买数量:
递送:
付款:
库存 : 3258
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.501
$1.501
10
$1.2312
$12.312
100
$0.957505
$95.7505
500
$0.811604
$405.802
1000
$0.661134
$661.134
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 14A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drain to Source Voltage (Vdss) | 300 V |
| Power Dissipation (Max) | 107W (Tc) |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
