SQ4850EY-T1_GE3
detaildesc

SQ4850EY-T1_GE3

Vishay Siliconix

型号:

SQ4850EY-T1_GE3

封装:

8-SOIC

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 60V 12A 8SO

购买数量:

递送:

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付款:

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库存 : 24166

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.254

    $1.254

  • 10

    $1.026

    $10.26

  • 100

    $0.797905

    $79.7905

  • 500

    $0.676324

    $338.162

  • 1000

    $0.550943

    $550.943

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 6A, 5V
Product Status Last Time Buy
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 8-SOIC
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 6.8W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQ4850