SQ2319ES-T1-GE3
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SQ2319ES-T1-GE3

Vishay Siliconix

型号:

SQ2319ES-T1-GE3

封装:

SOT-23-3 (TO-236)

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 40V 4.6A TO-236

购买数量:

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产品信息

参数信息

用户指南

FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 75mOhm @ 3A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 40 V
Series -
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Package Cut Tape (CT)
Base Product Number SQ2319