SQ2301ES-T1_GE3
detaildesc

SQ2301ES-T1_GE3

Vishay Siliconix

型号:

SQ2301ES-T1_GE3

封装:

TO-236 (SOT-23)

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 20V 3.9A TO236

购买数量:

递送:

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付款:

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库存 : 4645

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.4845

    $0.4845

  • 10

    $0.41705

    $4.1705

  • 100

    $0.289845

    $28.9845

  • 500

    $0.226328

    $113.164

  • 1000

    $0.183968

    $183.968

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 175°C (TA)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 120mOhm @ 2.8A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package TO-236 (SOT-23)
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 3W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SQ2301