SIZF906ADT-T1-GE3
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SIZF906ADT-T1-GE3

Vishay Siliconix

型号:

SIZF906ADT-T1-GE3

封装:

8-PowerPair® (6x5)

批次:

-

数据手册:

pdf

描述:

MOSFET DUAL N-CHAN 30V

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V, 8200pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V, 200nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 8-PowerPair® (6x5)
Drain to Source Voltage (Vdss) 30V
Series TrenchFET® Gen IV
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)
Package Tape & Reel (TR)
Base Product Number SIZF906