SIZF640DT-T1-GE3
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SIZF640DT-T1-GE3

Vishay Siliconix

型号:

SIZF640DT-T1-GE3

封装:

PowerPAIR® 6x5FS

批次:

-

数据手册:

pdf

描述:

DUAL N-CHANNEL 40 V (D-S) MOSFET

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual) Common Source
Input Capacitance (Ciss) (Max) @ Vds 5750pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 106nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.37mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package PowerPAIR® 6x5FS
Drain to Source Voltage (Vdss) 40V
Series TrenchFET® Gen IV
Package / Case 8-PowerDFN
Technology MOSFET (Metal Oxide)
Power - Max 4.2W (Ta), 62.5W (Tc)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 41A (Ta), 159A (Tc)
Package Tape & Reel (TR)
Base Product Number SIZF640