SIZ926DT-T1-GE3
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SIZ926DT-T1-GE3

Vishay Siliconix

型号:

SIZ926DT-T1-GE3

封装:

8-PowerPair® (6x5)

批次:

-

数据手册:

pdf

描述:

MOSFET 2 N-CH 25V 8-POWERPAIR

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 925pF @ 10V, 2150pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V, 41nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.8mOhm @ 5A, 10V, 2.2mOhm @ 8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 8-PowerPair® (6x5)
Drain to Source Voltage (Vdss) 25V
Series TrenchFET® Gen IV
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 20.2W, 40W
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 40A (Tc), 60A (Tc)
Package Tape & Reel (TR)
Base Product Number SIZ926