SISS80DN-T1-GE3
detaildesc

SISS80DN-T1-GE3

Vishay Siliconix

型号:

SISS80DN-T1-GE3

封装:

PowerPAK® 1212-8S

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 58.3A/210A PPAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 11904

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.52

    $1.52

  • 10

    $1.26445

    $12.6445

  • 100

    $1.00662

    $100.662

  • 500

    $0.851751

    $425.8755

  • 1000

    $0.722694

    $722.694

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.92mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 5W (Ta), 65W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 58.3A (Ta), 210A (Tc)
Vgs (Max) +12V, -8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS80