SISS70DN-T1-GE3
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SISS70DN-T1-GE3

Vishay Siliconix

型号:

SISS70DN-T1-GE3

封装:

PowerPAK® 1212-8S

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 125V 8.5A/31A PPAK

购买数量:

递送:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 62.5 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 29.8mOhm @ 8.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 125 V
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 31A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SISS70