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SISS4409DN-T1-GE3
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SISS4409DN-T1-GE3

Vishay Siliconix

型号:

SISS4409DN-T1-GE3

封装:

PowerPAK® 1212-8S

批次:

-

数据手册:

pdf

描述:

P-CHANNEL 40 V (D-S) MOSFET POWE

购买数量:

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5670 pF @ 20 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 4.8W (Ta), 56.8W (Tc)
Series -
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta), 59.2A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)