SISS23DN-T1-GE3
detaildesc

SISS23DN-T1-GE3

Vishay Siliconix

型号:

SISS23DN-T1-GE3

封装:

PowerPAK® 1212-8S

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 20V 50A PPAK 1212-8S

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 6254

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.7885

    $0.7885

  • 10

    $0.69255

    $6.9255

  • 100

    $0.53086

    $53.086

  • 500

    $0.419691

    $209.8455

  • 1000

    $0.335749

    $335.749

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -50°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8840 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 900mV @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SISS23