SISS22LDN-T1-GE3
Vishay Siliconix
型号:
SISS22LDN-T1-GE3
品牌:
封装:
PowerPAK® 1212-8S
批次:
-
数据手册:
描述:
MOSFET N-CH 60V 25.5A/92.5A PPAK
购买数量:
递送:
付款:
库存 : 14000
最小起订量: 1 最小递增量: 1
数量
单价
总价
1
$1.102
$1.102
10
$0.90155
$9.0155
100
$0.701195
$70.1195
500
$0.594358
$297.179
1000
$0.484168
$484.168
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2540 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3.65mOhm @ 15A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Series | TrenchFET® Gen IV |
| Package / Case | PowerPAK® 1212-8S |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Vishay Siliconix |
| Current - Continuous Drain (Id) @ 25°C | 25.5A (Ta), 92.5A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SISS22 |
