SISHA14DN-T1-GE3
detaildesc

SISHA14DN-T1-GE3

Vishay Siliconix

型号:

SISHA14DN-T1-GE3

封装:

PowerPAK® 1212-8SH

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 30V 19.7A/20A PPAK

购买数量:

递送:

1.webp 4.webp 5.webp 2.webp 3.webp

付款:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

库存 : 4254

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $0.5795

    $0.5795

  • 10

    $0.5054

    $5.054

  • 100

    $0.349695

    $34.9695

  • 500

    $0.29222

    $146.11

  • 1000

    $0.2487

    $248.7

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.1mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.57W (Ta), 26.5W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 19.7A (Ta), 20A (Tc)
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISHA14