SISH434DN-T1-GE3
detaildesc

SISH434DN-T1-GE3

Vishay Siliconix

型号:

SISH434DN-T1-GE3

封装:

PowerPAK® 1212-8SH

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 40V 17.6A/35A PPAK

购买数量:

递送:

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付款:

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库存 : 3618

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.0735

    $1.0735

  • 10

    $0.8759

    $8.759

  • 100

    $0.681055

    $68.1055

  • 500

    $0.577277

    $288.6385

  • 1000

    $0.47025

    $470.25

请发送询价,我们将立即回复。

产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.6mOhm @ 16.2A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 17.6A (Ta), 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH434