SISH129DN-T1-GE3
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SISH129DN-T1-GE3

Vishay Siliconix

型号:

SISH129DN-T1-GE3

封装:

PowerPAK® 1212-8SH

批次:

-

数据手册:

pdf

描述:

MOSFET P-CH 30V 14.4A/35A PPAK

购买数量:

递送:

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付款:

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产品信息

参数信息

用户指南

Operating Temperature -50°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3345 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.4mOhm @ 14.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 14.4A (Ta), 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH129