SISH114ADN-T1-GE3
detaildesc

SISH114ADN-T1-GE3

Vishay Siliconix

Product No:

SISH114ADN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 30V 18A/35A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 5987

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.703

    $0.703

  • 10

    $0.608

    $6.08

  • 100

    $0.420945

    $42.0945

  • 500

    $0.351747

    $175.8735

  • 1000

    $0.299364

    $299.364

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.5mOhm @ 18A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 35A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH114