SISH106DN-T1-GE3
detaildesc

SISH106DN-T1-GE3

Vishay Siliconix

型号:

SISH106DN-T1-GE3

封装:

PowerPAK® 1212-8SH

批次:

-

数据手册:

pdf

描述:

MOSFET N-CH 20V 12.5A PPAK

购买数量:

递送:

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付款:

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库存 : 6833

最小起订量: 1 最小递增量: 1

数量

单价

总价

  • 1

    $1.5675

    $1.5675

  • 10

    $1.28535

    $12.8535

  • 100

    $0.9994

    $99.94

  • 500

    $0.847115

    $423.5575

  • 1000

    $0.69007

    $690.07

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产品信息

参数信息

用户指南

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.2mOhm @ 19.5A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Mfr Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C 12.5A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Tape & Reel (TR)
Base Product Number SISH106